MC908GZ60CFJE Freescale Semiconductor, MC908GZ60CFJE Datasheet - Page 49

IC MCU 60K FLASH 8MHZ 32-LQFP

MC908GZ60CFJE

Manufacturer Part Number
MC908GZ60CFJE
Description
IC MCU 60K FLASH 8MHZ 32-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC908GZ60CFJE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
21
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-LQFP
Controller Family/series
HC08
No. Of I/o's
21
Ram Memory Size
2KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
CAN, SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08GZ
Core
HC08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
CAN, ESCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
53
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68EML08GZE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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B. While these operations must be performed in the order shown, other unrelated operations may occur
C. It is highly recommended that interrupts be disabled during program/erase operations.
2.6.5 FLASH-1 Page Erase Operation
Use this step-by-step procedure to erase a page (128 bytes) of FLASH-1 memory:
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
B. While these operations must be performed in the order shown, other unrelated operations may occur
C. It is highly recommended that interrupts be disabled during program/erase operations.
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.
2.6.6 FLASH-1 Program Operation
Programming of the FLASH-1 memory is done on a row basis. A row consists of 64 consecutive bytes
with address ranges as follows:
Freescale Semiconductor
10. Wait for a time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH-1 control register (FL1CR).
2. Read the FLASH-1 block protect register (FL1BPR).
3. Write any data to any FLASH-1 address within the address range of the page (128 byte block) to
4. Wait for time, t
5. Set the HVEN bit.
6. Wait for time, t
7. Clear the ERASE bit.
8. Wait for time, t
9. Clear the HVEN bit.
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
same FLASH array.
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
be erased.
$XX00 to $XX3F
$XX40 to $XX7F
$XX80 to $XXBF
$XXC0 to $XXFF
MC68HC908GZ60 • MC68HC908GZ48 • MC68HC908GZ32 Data Sheet, Rev. 6
NVS
ERASE
NVH
RCV
(minimum 10 μs).
(minimum 5 μs).
, (typically 1 μs) after which the memory can be accessed in normal read mode.
(minimum 1 ms or 4 ms).
NOTES
FLASH-1 Memory (FLASH-1)
49

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