MC912DG128AMPVE Freescale Semiconductor, MC912DG128AMPVE Datasheet - Page 120

• Manufacturer Part Number: MC912DG128AMPVE
• Description: IC MCU 128K FLASH 8MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC912DG128AMPVE

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: HC912D
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 69
• Number Of Timers: 8
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Flash Memory
8.8 Programming the Flash EEPROM
Technical Data
120
Programming and erasing of Flash locations cannot be performed by
code being executed from the Flash memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Programming the Flash EEPROM is done on a row basis. A row consists
of 32 consecutive words (64 bytes) with rows starting from addresses
$XX00, $XX40, $XX80 and $XXC0. When writing a row care should be
taken not to write data to addresses outside of the row. Programming is
restricted to aligned word i.e. data writes to select rows/blocks for
programming/erase should be to even adresses and writes to any row
for programming should be to aligned words.
Use this step-by-step procedure to program a row of Flash memory.
10. Wait for a time, t
11. Clear the HVEN bit.
1. Set the PGM bit. This configures the memory for program
2. Write to any aligned word Flash address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write one data word (two bytes) to the next aligned word Flash
7. Wait for a time, t
8. Repeat step 6 and 7 until all the words within the row are
9. Clear the PGM bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
operation and enables the latching of address and data for
programming.
range desired (with any data) to select the row.
address to be programmed. If BOOTP is asserted, an attempt to
program an address in the boot block will be ignored.
programmed.
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Flash Memory
NVS
PGS
FPGM
NVH
(min. 10µs).
(min. 5µs).
(min. 5µs).
(min. 30µs).
FPGM
MC68HC912DT128A — Rev 4.0
maximum (40µs).
MOTOROLA