MC912DG128AMPVE Freescale Semiconductor, MC912DG128AMPVE Datasheet - Page 123

• Manufacturer Part Number: MC912DG128AMPVE
• Description: IC MCU 128K FLASH 8MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC912DG128AMPVE

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: HC912D
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 69
• Number Of Timers: 8
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technical Data — MC68HC912DT128A
9.1 Contents
9.2 Introduction
MC68HC912DT128A — Rev 4.0
MOTOROLA
9.2
9.3
9.4
9.5
9.6
9.7
9.8
The MC68HC912DT128A EEPROM nonvolatile memory is arranged in
a 16-bit configuration. The EEPROM array may be read as either bytes,
aligned words or misaligned words. Access times are one bus cycle for
byte and aligned word access and two bus cycles for misaligned word
operations.
Programming is by byte or aligned word. Attempts to program or erase
misaligned words will fail. Only the lower byte will be latched and
programmed or erased. Programming and erasing of the user EEPROM
can be done in normal modes.
Each EEPROM byte or aligned word must be erased before
programming. The EEPROM module supports byte, aligned word, row
(32 bytes) or bulk erase, all using the internal charge pump. The erased
state is $FF. The EEPROM module has hardware interlocks which
protect stored data from corruption by accidentally enabling the
program/erase voltage. Programming voltage is derived from the
internal V
Freescale Semiconductor, Inc.
For More Information On This Product,
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
EEPROM Selective Write More Zeros . . . . . . . . . . . . . . . . . .124
EEPROM Programmer’s Model . . . . . . . . . . . . . . . . . . . . . . .125
EEPROM Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Program/Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . .133
Shadow Word Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Programming EEDIVH and EEDIVL Registers. . . . . . . . . . . . 135
DD
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supply with an internal charge pump.
EEPROM Memory
Section 9. EEPROM Memory
Technical Data
123