BSC900N20NS3G Infineon Technologies

BSC900N20NS3G

Manufacturer Part Number

BSC900N20NS3G

Description

MOSFET N-CH 200V 15.2A 8TDSON

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Specifications of BSC900N20NS3G

Input Capacitance (ciss) @ Vds

920pF @ 100V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

90 mOhm @ 7.6A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

15.2A

Vgs(th) (max) @ Id

4V @ 30µA

Gate Charge (qg) @ Vgs

11.6nC @ 10V

Power - Max

62.5W

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

77 mOhms

Forward Transconductance Gfs (max / Min)

16 S, 8 S

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

15.2 A

Power Dissipation

62.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSC900N20NS3GTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSC900N20NS3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BSC900N20NS3G

Quantity:

4 800

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