NTE5499 NTE ELECTRONICS, NTE5499 Datasheet - Page 2
NTE5499
Manufacturer Part Number
NTE5499
Description
SCR THYRISTOR, 7.6A, 800V, TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5499.pdf
(2 pages)
Specifications of NTE5499
Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max, Igt
10mA
Current It Av
7.6A
On State Rms Current It(rms)
12A
Peak Non Rep Surge Current Itsm 50hz
120A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn−Off Time
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
Symbol
Cathode
dv/dt
di/dt
.100 (2.54)
t
I
I
t
gd
H
L
q
R
R
V
I
I
V
T
G
G
C
D
D
GK
GK
= 50mA, di
= 50mA, di
= +85°C
= .67 x V
= .67 x V
A
= 1kΩ
= 1kΩ
= +25°C unless otherwise specified)
.420 (10.67)
Max
DRM
DRM
Test Conditions
G
G
Anode
/dt = 0.5A/μs, T
/dt = 0.5A/μs
, R
, V
R
GK
= 35V, I
= 1kΩ, T
.250 (6.35)
Max
Gate
Anode
T
J
.110 (2.79)
= I
J
= +125°C
(12.7)
(12.7)
= +125°C 100
.500
Max
.500
T(AV)
Min
,
Min Typ Max
100
−
−
−
−
−
−
−
−
−
−
500
40
30
50
−
−
Unit
V/μs
A/μs
mA
mA
μs
ns