NTE5536 NTE ELECTRONICS, NTE5536 Datasheet - Page 2

• Manufacturer Part Number: NTE5536
• Description: SCR THYRISTOR, 40A, 800V, TO-220
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5536

• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max, Igt: 50mA
• Current It Av: 40A
• On State Rms Current It(rms): 40A
• Peak Non Rep Surge Current Itsm 50hz: 400A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note 3. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Peak Forward Blocking Voltage
Peak Forward or Reverse
Forward ON Voltage
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
Gate Non−Trigger Voltage
Holding Current
Turn−On Time
Critical Rate of Rise of Off−State
Blocking Current
Voltage
Parameter
.070 (1.78) Max
.147 (3.75)
Dia Max
Cathode
C
.100 (2.54)
Symbol
V
I
I
dv/dt
V
DRM
V
V
RRM
I
DRM
I
t
GT
GD
TM
GT
H
gt
,
T
Rated V
Rated V
I
Anode Voltage = 12V, R
Anode Voltage = 12V, R
T
Anode Voltage = 12V, R
Anode Voltage = 800V, R
T
Anode Voltage = 12V
I
V
Exponential Waveform
.420 (10.67)
TM
TM
J
C
J
DRM
= +125°C
= +125°C
= −40°C
= 80A, Note 3
= 40A, I
Max
= 800V, Gate Open,
DRM
DRM
Test Conditions
GT
or V
or V
= 60mA
(6.35)
RRM
RRM
.250
Max
Gate
Anode/Tab
.110 (2.79)
, T
, T
(12.7)
(12.7)
J
J
L
L
L
.500
.500
Max
Min
L
= +25°C
= +125°C
= 100Ω
= 100Ω,
= 100Ω
= 100Ω,
Min
800
0.2
−
−
−
−
−
−
−
−
−
Typ
1.6
1.0
1.5
15
30
30
50
−
−
−
−
Max
2.0
1.5
10
50
90
60
−
2
−
−
−
Unit
V/μs
mA
mA
mA
mA
μA
μs
V
V
V
V