PTFB211501E V1 R250 Infineon Technologies

RF MOSFET Small Signal RFP-LDMOS 9

PTFB211501E V1 R250

Manufacturer Part Number

PTFB211501E V1 R250

Description

RF MOSFET Small Signal RFP-LDMOS 9

Manufacturer

Infineon Technologies

Specifications of PTFB211501E V1 R250

Configuration

Single

Resistance Drain-source Rds (on)

0.08 Ohms

Drain-source Breakdown Voltage

65 V

Gate-source Breakdown Voltage

10 V

Continuous Drain Current

1.2 A

Maximum Operating Temperature

+ 125 C

Minimum Operating Temperature

- 40 C

Package / Case

H-36248-2

Other names

FB211501EV1R25XT

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