PTFA041501E V4 R250 Infineon Technologies

RF MOSFET Small Signal RFP-LDMOS GOLDMOS 8

PTFA041501E V4 R250

Manufacturer Part Number
PTFA041501E V4 R250
Description
RF MOSFET Small Signal RFP-LDMOS GOLDMOS 8
Manufacturer
Infineon Technologies

Specifications of PTFA041501E V4 R250

Configuration
Single
Resistance Drain-source Rds (on)
0.07 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
900 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
H-36248-2
Other names
FA041501EV4R25XT

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