NE02133-T1B-R3 CEL, NE02133-T1B-R3 Datasheet - Page 3

• Manufacturer Part Number: NE02133-T1B-R3
• Description: RF Bipolar Small Signal NPN High Frequency
• Manufacturer: CEL

Specifications of NE02133-T1B-R3

• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.07 A
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
2. Typical BV
3. Maximum T
4. Maximum storage temperature for the NE02135 is -65 to
SYMBOLS
in permanent damage.
is +150°C.
+150°C. Maximum storage temperature for the
NE02133 and NE02139 is -55 to 150°C.
V
V
V
T
CBO
CEO
EBO
T
STG
I
C
J
400
300
200
100
0.7
70
50
30
20
10
5
3
2
7
1
0
CER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
J
0.5
0
for the NE02133 and NE02139
= 25 V for R ≤ 300 Ω.
DC POWER DERATING CURVES
PARAMETERS
Base to Emitter Voltage, V
Ambient Temperature, T
VOLTAGE CURRENT
CHARACTERISTICS
50
0.6
2
3
4
1
NE02133
100
0.7
1. Mounted On Al
(32x21x10mm) And Encapsulated
In Epoxy Resin (R
2. Mounted On Al
(18x29x0.8mm) R
3. Mounted On Al
(10x15x0.8mm) R
4. Free Air, R
UNITS
150
V
A
mA
0.8
°C
°C
BE
TH
CE
V
V
V
(°C)
(
= 10 V
J-A
(V)
TH
TH
2
TH
2
2
O
O
O
) = 666˚C/W
(
(
3
3
3
J-A
J-A
(
1
J-A
Substrate
Substrate
Substrate
) = 370˚C/W
) = 490˚C/W
(T
-65 to +200
) = 267˚C/W
200
RATINGS
0.9
A
(T
200
= 25°C)
12
25
70
3
A
2
3
= 25°C)
4
200
600
400
800
400
800
600
200
0.5
0.7
0.3
0
0
2
1
NE02107
0
0
0
R
500˚C/W
FREE AIR
R
C
TH (J-A)
DC POWER DERATING CURVES
EB
DC POWER DERATING CURVES
TH(J-A)
MOUNTED ON AI
SUBSTRATE
(20X50X0.6") R
Collector to Base Voltage, V
Emitter to Base Voltage, V
Ambient Temperature, T
Ambient Temperature, T
0.5
DEVICE CAPACITANCE
=
= 600˚C/W
NE02107
R
50
50
NE02100, NE02107
TH(J-C)
1
190˚C/W
TH(J-A)
= 90˚C/W
NE02135
2
2
O
C
100
100
3
CB
3
=
WITH INFINITE
HEAT SINK
R
TH(J-C)
NE02100
R
5
TH(J-C)
7 10
= 120˚ C/W
f =1 MHz
I
150
150
E
A
A
= 70˚C/W
= 0
EB
(°C)
(°C)
CB
(V)
(V)
20 30
200
200