BFG424F T/R NXP Semiconductors, BFG424F T/R Datasheet - Page 3

• Manufacturer Part Number: BFG424F T/R
• Description: RF Bipolar Small Signal NPN 25GHZ WIDEBAND TRANSISTOR
• Manufacturer: NXP Semiconductors

Specifications of BFG424F T/R

• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG424F,115

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
BFG424F_1
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Symbol
V
V
V
I
P
T
T
Symbol
R
C
Fig 1. Power derating curve
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
T
sp
sp
is the temperature at the soldering point of the emitter pins.
is the temperature at the soldering point of the emitter pins.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Parameter
thermal resistance from junction
to solder point
(mW)
P
tot
Rev. 01 — 21 March 2006
200
150
100
50
0
0
40
Conditions
open emitter
open base
open collector
T
sp
90 C
80
Conditions
T
sp
90 C
120
NPN 25 GHz wideband transistor
T
001aad817
sp
( C)
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
160
[1]
[1]
Min
-
-
-
-
-
-
Typ
340
BFG424F
65
Max
10
4.5
1
30
135
+150
150
Unit
K/W
Unit
V
V
V
mA
mW
3 of 13
C
C