IRG4PSC71KDPBF International Rectifier, IRG4PSC71KDPBF Datasheet
IRG4PSC71KDPBF
Manufacturer Part Number
IRG4PSC71KDPBF
Description
IGBT UFAST W/DIODE 600V SUPER247
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets
1.IRG4PSC71KDPBF.pdf
(10 pages)
2.IRG4PSC71KD.pdf
(10 pages)
3.IRG4PSC71KDPBF.pdf
(3 pages)
Specifications of IRG4PSC71KDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 60A
Current - Collector (ic) (max)
85A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Capacitance, Gate
6900 pF
Current, Collector
85 A
Energy Rating
6.28 mJ
Package Type
SUPER-247
Polarity
N-Channel
Power Dissipation
350 W
Resistance, Thermal, Junction To Case
0.36 °C/W
Speed, Switching
8 to 25 kHz
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.2 V
Transistor Type
IGBT
Dc Collector Current
85A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Pd
350W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-274AA
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
85
Ic @ 100c (a)
60
Vce(on)@25c Typ (v)
1.83
Vce(on)@25c Max (v)
2.30
Ets Typ (mj)
6.28
Ets Max (mj)
7.7
Qrr Typ Nc 25c
364
Qrr Max Nc 25c
546
Vf Typ
1.40
Pd @25c (w)
350
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PSC71KDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PSC71KDPBF
Manufacturer:
IR
Quantity:
1 240
Company:
Part Number:
IRG4PSC71KDPBF
Manufacturer:
ON
Quantity:
6 000
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Benefits
Absolute Maximum Ratings
Thermal Resistance\ Mechanical
www.irf.com
• Hole-less clip/pressure mount package compatible
• High abort circuit rating IGBTs, optimized for
• Minimum switching losses combined with low
• Tightest parameter distribution
• IGBT co-packaged with ultrafast soft recovery
• Creepage distance increased to 5.35mm
• Highest current rating copack IGBT
• Maximum power density, twice the power
• HEXFRED
Features
R
R
R
R
V
I
I
I
I
I
I
t
V
P
P
T
T
C
C
CM
LM
F
FM
sc
STG
handling of the TO-247, less space than TO-264
IGBT, to minimize EMI, noise and switching losses
CES
GE
D
D
J
motorcontrol
with TO-247 and TO-264, with reinforced pins
conduction losses
antiparallel diode
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diode optimized for operation with
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
PRELIMINARY
G
n-ch an nel
20.0(2.0)
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PSC71KD
C
E
SUPER - 247
-55 to +150
Max.
6 (0.21)
85
± 20
600
200
200
200
350
140
Typ.
60
50
10
0.24
–––
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
V
GE
CES
PD - 91684A
= 15V, I
Max.
0.36
0.69
–––
–––
–––
38
= 600V
= 1.83V
C
= 60A
N (kgf)
Units
Units
g (oz)
°C/W
µs
°C
V
A
V
W
1
5/11/99
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IRG4PSC71KDPBF Summary of contents
Page 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction ...
Page 2
IRG4PSC71KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
Page 3
rate d 30 volta 0.1 Fig Typical Load Current vs. ...
Page 4
IRG4PSC71KD LIM ITED ase ...
Page 5
1MHz ies res 8000 oes ies 6000 4000 2000 C oes C res ...
Page 6
IRG4PSC71KD 5 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching ...
Page 7
° ° ...
Page 8
IRG4PSC71KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
Page 9
Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com ...
Page 10
IRG4PSC71KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot Current limited by the ...