BFP 405 H6327 Infineon Technologies, BFP 405 H6327 Datasheet - Page 3
BFP 405 H6327
Manufacturer Part Number
BFP 405 H6327
Description
TRANS RF NPN 4.5V 25MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BFP405E6327.pdf
(9 pages)
Specifications of BFP 405 H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Gain
23dB
Power - Max
75mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 4V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1
2
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
Power gain, maximum stable
I
Z
Insertion power gain
V
Z
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
G ms = | S 21 / S 12 |
IP3 value depends on termination of all intermodulation frequency components.
L
S
S
CB
CE
EB
CE
CE
= 10 mA, V
= 2 mA, V
= 5 mA, V
= 5 mA, V
= Z
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= 2 V, I
Lopt
L
L
= 50 Ω
= 50 Ω
, f = 1.8 GHz
C
C
CE
CE
CE
CE
= 5 mA, f = 1.8 GHz,
= 5 mA, f = 1.8 GHz,
= 2 V, f = 1.8 GHz, Z
= 2 V, Z
= 2 V, Z
= 3 V, f = 2 GHz
BE
BE
S
S
CB
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
1)
Sopt
L
= 50 Ω ,
A
,
= 25°C, unless otherwise specified
2)
S
= Z
Sopt
3
Symbol
f
C
C
C
F
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
21
3
|
2
min.
18
14
-
-
-
-
-
-
-
Values
18.5
0.05
0.24
0.29
1.25
typ.
25
23
15
5
2009-11-06
max.
0.1
-
-
-
-
-
-
-
-
BFP405
Unit
GHz
pF
dB
dB
dBm