BSM50GX120DN2 Infineon Technologies, BSM50GX120DN2 Datasheet - Page 6

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BSM50GX120DN2

Manufacturer Part Number
BSM50GX120DN2
Description
Manufacturer
Infineon Technologies
Datasheet

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I
Cpuls
BSM 50 GB 120 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Cpuls
parameter: V
V
GE
GE
/I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
40
)
GE
)
,
= 15 V
80
T
400
= 50 A
j
= 150°C
120
600
160
800 1000 1200
600 V
200
240
280 nC 340
Q
800 V
V
V
Gate
CE
1600
6
I
Typ. capacitances
C = f (V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 50 nH
30
Oct-21-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40