BTS555E3146 Infineon Technologies, BTS555E3146 Datasheet - Page 10

• Manufacturer Part Number: BTS555E3146
• Manufacturer: Infineon Technologies

Inverse load current operation
The device is specified for inverse load current
operation (V
is not available during this kind of operation (I
With I
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (V
much lower value R
4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R L
Infineon Technologies AG
+
-
E
V bb
AS
IN
IN
= 0), this power dissipation is decreased to the
=
= 0 (e.g. input open) only the intrinsic drain
E
I
E
V
IN
V
bb
2
AS
I
bb
L
IN
·
R
·
OUT
L
= E
L
(
V
bb
> V
bb
IN
+ E
ON(INV)
+ |V
bb
E
IN
V
L
L
> 0V). The current sense feature
IS
PROFET
- E
OUT(CL)
=
IS
V
1 /
R
PROFET
* I
bb
2
= V
·
R IS
V
IS
2
bb
L
(specifications see page
|)
·
I
R
IS
ON(CL)
I
OUT
2
L
ln
IS
(1+
OUT
E AS
Z L
0 :
·
|V
{
i
L
i (t)
L
(t) dt,
OUT(CL)
R L
I
L
L
·
V
- I
IS
R
OUT
L
L
= 0).
E
|
E
E Load
R
)
+
L
-
10
Maximum allowable load inductance for
a single switch off
L = f (I L ); T j,start = 150°C, V bb = 12 V, R L = 0
L [µH]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by I
R
the short circuit current is defined by I
device is shut down after t
IN
Signal
V
1000000
*C
100000
10000
V
1000
T1 will be reset. The device is turned on again,
100
10
Signal
GND
1
R
V
1
T1
V bb
S
*R
IS
. After a delay time defined by
IN
C
10
V
d(SC)
Data Sheet BTS555
PROFET
T2
V bb
with latch function.
100
OUT
L(SC)
IS
2003-Oct-01
R
and the
IS
R
Power
GND
1000
load
I L [A]