MCR106-6, MCR106-8
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
2. Torque rating applies with use of compression washer (B52200-F006 or
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
November, 2008 − Rev. 5
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
Hz, R
On-State RMS Current, (T
(180 Conduction Angles)
Average On−State Current,
(180 Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Considerations, (t = 8.3 ms)
Forward Peak Gate Power,
(T
Forward Average Gate Power,
(T
Forward Peak Gate Current,
(T
Peak Reverse Gate Voltage,
(T
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
High Heat Dissipation and Durability
Glass-Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2008
J
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200 C. For
optimum results, an activated flux (oxide removing) is recommended.
C
C
C
C
= −40 to 110 C, Sine Wave 50 to 60
DRM
PNPN devices designed for high volume consumer applications
= 93 C, Pulse Width v 1.0 ms)
= 93 C, t = 8.3 ms)
= 93 C, Pulse Width v 1.0 ms)
= 93 C, Pulse Width v 1.0 ms)
GK
and V
= 1 kW)
RRM
Rating
for all types can be applied on a continuous basis. Ratings
MCR106−6
MCR106−8
(T
J
C
C
= 25 C unless otherwise noted)
= 93 C)
Preferred Device
= 93 C)
J
= 110 C)
Symbol
I
P
V
V
T(RMS)
V
I
I
P
T(AV)
I
T
TSM
G(AV)
DRM,
RRM
RGM
I
GM
T
GM
stg
−
2
J
t
−40 to +110
−40 to +150
Value
2.55
400
600
4.0
2.6
0.5
0.1
0.2
6.0
6.0
25
1
in. lb.
Unit
A
W
W
V
A
A
A
A
V
2
C
C
s
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
ORDERING INFORMATION
400 thru 600 VOLTS
3
Y
WW
CR106−x = Device Code
G
4 AMPERES RMS
2
A
MARKING DIAGRAM
http://onsemi.com
1
PIN ASSIGNMENT
= Year
= Work Week
= Pb−Free Package
SCRs
x = 6 or 8
106−xG
YWW
Publication Order Number:
CR
TO−225AA
Cathode
CASE 77
Anode
STYLE 2
Gate
G
K
MCR106/D