MRF372 Freescale Semiconductor, MRF372 Datasheet

MRF372

Manufacturer Part Number
MRF372
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF372

Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
17A
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
17dB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
NI-860C3
Pin Count
5
Forward Transconductance (typ)
2.6S
Input Capacitance (typ)@vds
260@32VpF
Output Capacitance (typ)@vds
69@32VpF
Reverse Capacitance (typ)
2.5@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
37%
Mounting
Screw
Mode Of Operation
2-Tone
Power Dissipation (max)
350000mW
Vswr (max)
3
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF372
Manufacturer:
SAMSUNG
Quantity:
860 000
Part Number:
MRF372
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two - Tone Performance @ f1 = 857 MHz,
• Typical Broadband Two - Tone Performance @ f1 = 857 MHz,
• Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Features
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
f2 = 863 MHz, 32 Volts
f2 = 863 MHz, 32 Volts
Power
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Derate above 25°C
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — - 35 dBc
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — - 31 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
I
θJC
GS
stg
D
D
C
J
470 - 860 MHz, 180 W, 32 V
LATERAL N - CHANNEL
CASE 375G - 04, STYLE 1
Document Number: MRF372
RF POWER MOSFET
M3 (Minimum)
1 (Minimum)
MRF372R3
MRF372R5
- 65 to +150
- 0.5, +68
- 0.5, +15
Value
Value
Class
350
150
200
2.0
0.5
NI - 860C3
17
MRF372R3 MRF372R5
Rev. 9, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

Related parts for MRF372

MRF372 Summary of contents

Page 1

... Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF372 Rev. 9, 5/2006 MRF372R3 MRF372R5 470 - 860 MHz, 180 LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 ...

Page 2

... DSS I GSS V GS(th) V GS(Q) V DS(on iss C oss C rss (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system η IMD = 800 mA, (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system 1000 mA, η = 1000 mA, IMD = 1000 mA, Min Typ Max 68 — — — — 10 μAdc — — 1 μAdc ...

Page 3

... RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS C iss C oss C rss DRAIN−SOURCE VOLTAGE (VOLTS) DS Note: C does not include input matching capacitance. iss Figure 1. Capacitance versus Voltage MRF372R3 MRF372R5 3 ...

Page 4

... MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, ε ...

Page 5

... C7B L2B C12B C5B C8B C10B MRF372 Rev 1a Vertical Balun Mounting Detail Ground C15 C14A C13 C14B Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Input (50 ohm microstrip) 55 mil slot cut out to accept Balun MRF372R3 MRF372R5 5 ...

Page 6

... I = 400 mA −25 DQ −30 800 mA −35 1.2 A −40 −45 1.6 A − OUTPUT POWER (WATTS) PEP out Figure 7. Intermodulation Distortion versus Output Power MRF372R3 MRF372R5 Vdc 1600 Mode 64 QAM 10 dB Peak/Avg. Ratio IMR OUTPUT POWER (WATTS) AVG. out Note: IMR measured using Delta Marker Method. ...

Page 7

... Z = Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device + Under − Test − source load load Ω load Ω Output Matching Network MRF372R3 MRF372R5 7 ...

Page 8

... MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á ...

Page 9

... Rev. 1a Vertical Balun Mounting Detail Ground C16A C15A R10A C14A C14B C13 C14C C14D R10B C15B C16B Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) Input (50 ohm microstrip) 55 mil slot cut out to accept Balun MRF372R3 MRF372R5 9 ...

Page 10

... MHz 860 MHz OUTPUT POWER (WATTS) PEP out Figure 12. Power Gain versus Output Power Figure 14. Drain Efficiency versus Output Power MRF372R3 MRF372R5 10 − Vdc DD − 1000 − MHz −20 −25 −30 −35 −40 −45 −50 100 Figure 13. Intermodulation Distortion versus ...

Page 11

... Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input + Under − Matching Test Network − source load = 10 Ω 860 MHz Z load f = 470 MHz load Ω Output Matching Network MRF372R3 MRF372R5 11 ...

Page 12

... MRF372R3 MRF372R5 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF372R3 MRF372R5 13 ...

Page 14

... MRF372R3 MRF372R5 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... N 0.851 0.869 21.62 22.07 Q 0.118 0.138 3.00 3.30 R 0.395 0.405 10.03 10.29 S 0.394 0.406 10.01 10.31 bbb 0.010 REF 0.25 REF SEATING ccc 0.015 REF 0.38 REF PLANE STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF372R3 MRF372R5 15 ...

Page 16

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF372R3 MRF372R5 Document Number: MRF372 Rev. 9, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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