RF2132 RF Micro Devices, RF2132 Datasheet
RF2132
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RF2132 Summary of contents
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... AMPS Cellular Handsets • 4.8V CDMA/AMPS Handsets • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear ampli- fier IC. The device is manufactured on an advanced Gal- lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ...
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... RF2132 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (P <32dBm) OUT Power Control Voltage ( Supply Current Input RF Power Output Load VSWR Storage Temperature Junction Temperature Parameter Min. Overall Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output ...
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... Same as pin 10. 16 GND Same as pin 4. Rev B10 060908 , with a decoupling capacitor on the V CC for +31dBm RF output power. The maximum power that CC , whichever is the lowest. CC RF2132 Interface Schematic side. The value From Bias Stages See pin OUT From Bias Stages See pin 10 ...
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... RF2132 Vcc = 4.8 V Vpc = 4.0 V 100 pF 100 Ω Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 L1 1.8 nH Interstage tuning (L1) for centering output frequency C6 100 Adds bias to the first Ω amplifier stage for improved linearity P1-3 C12 ...
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... Rev B10 060908 Evaluation Board Layout 2” x 2” RF2132 2-113 ...
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... RF2132 Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA 2-114 RF2132 Evaluation Board ACPR 1.98 MHz ACPR 885 kHz Current Total Efficiency Pout (dBm Rev B10 060908 350 300 250 200 150 100 ...