STM8S103F3 STMicroelectronics, STM8S103F3 Datasheet - Page 53

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STM8S103F3

Manufacturer Part Number
STM8S103F3
Description
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3

Program Memory
8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data Memory
640 bytes true data EEPROM; endurance 300 kcycles
Ram
1 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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STM8S103K3 STM8S103F3 STM8S103F2
10.3.2
10.3.2.1
Symbol
I
DD(RUN)
Table 21: Total current consumption with code execution in run mode at V
code executed
code executed
Supply current
Supply current
in run mode,
in run mode,
Parameter
from Flash
from RAM
1. ESR is the equivalent series resistance and ESL is the equivalent inductance.
Supply current characteristics
The current consumption is measured as described in
Total current consumption in run mode
The MCU is placed under the following conditions:
Subject to general operating conditions for V
All I/O pins in input mode with a static value at V
All peripherals are disabled (clock stopped by peripheral clock gating registers) except if
explicitly mentioned.
Conditions
f
16 MHz
f
125 kHz
f
15.625 kHz
f
128 kHz
f
16 MHz
CPU
CPU
CPU
CPU
CPU
= f
= f
= f
= f
= f
MASTER
MASTER
MASTER
MASTER
MASTER
ESR
Figure 10: External capacitor C
/128 =
/128 =
=
=
=
DocID15441 Rev 7
HSE crystal osc. (16 MHz)
HSE user ext. clock (16 MHz)
HSI RC osc. (16 MHz)
HSE user ext. clock (16 MHz)
HSI RC osc. (16 MHz)
HSI RC osc. (16 MHz/8)
LSI RC osc. (128 kHz)
HSE crystal osc. (16 MHz)
HSE user ext. clock (16 MHz)
HSI RC osc. (16 MHz)
R Leak
C
DD
and T
DD
A
Pin input
or V
.
SS
EXT
(no load)
voltage.
Electrical characteristics
ESL
2.3
2
1.7
0.86
0.7
0.46
0.41
4.5
4.3
3.7
Typ
DD
Max
2.35
2
0.87
0.58
0.55
4.75
4.5
= 5 V
(1)
mA
53/113
Unit

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