STM8S103F3 STMicroelectronics, STM8S103F3 Datasheet - Page 65

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STM8S103F3

Manufacturer Part Number
STM8S103F3
Description
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3

Program Memory
8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data Memory
640 bytes true data EEPROM; endurance 300 kcycles
Ram
1 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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STM8S103K3 STM8S103F3 STM8S103F2
10.3.4
Symbol
(1)
(2)
small R
(3)
(4)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
f
HSI
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
C is approximately equivalent to 2 x crystal Cload.
Data based on characterization results, not tested in production.
t
SU(HSE)
m
value. Refer to crystal manufacturer for more details
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
HSE oscillator critical g
g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
mcrit
m
m
m
m
L1
Parameter
Frequency
: Notional inductance (see crystal specification)
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
>> g
= C
= (2 × Π × f
L2
mcrit
= C: Grounded external capacitance
R m
C m
L m
Resonator
HSE
C O
Table 34: HSI oscillator characteristics
)
Conditions
2
× R
Figure 18: HSE oscillator circuit diagram
m
m
(2Co + C)
equation
C L1
C L2
DocID15441 Rev 7
2
Resonator
OSCOUT
DD
OSCIN
and T
Min
A
.
R F
g m
Typ
16
Electrical characteristics
Consumption
control
f HSE to core
Max
STM8
Unit
MHz
65/113

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