STM8S005K6 STMicroelectronics, STM8S005K6 Datasheet - Page 68

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STM8S005K6

Manufacturer Part Number
STM8S005K6
Description
Value line, 16 MHz STM8S 8-bit MCU, 32 Kbytes Flash, data EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S005K6

Program Memory
32 Kbytes Flash; data retention 20 years at 55 °C after 100 cycles
Data Memory
128 bytes of true data EEPROM; endurance up to 100 k write/erase cycles
Ram
2 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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Electrical characteristics
9.3.4
68/103
(2)
small R
(3)
(4)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
Data based on characterization results, not tested in production.
t
SU(HSE)
m
value. Refer to crystal manufacturer for more details
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
HSE oscillator critical g
g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Symbol
f
mcrit
m
m
HSI
m
m
L1
: Notional inductance (see crystal specification)
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
>> g
= C
= (2 × Π × f
L2
mcrit
Parameter
= C: Grounded external capacitance
Frequency
R m
C m
L m
Resonator
HSE
C O
)
2
× R
Figure 18: HSE oscillator circuit diagram
Table 32: HSI oscillator characteristics
m
m
(2Co + C)
equation
C L1
C L2
DocID022186 Rev 2
Conditions
2
Resonator
OSCOUT
DD
OSCIN
and T
A
.
Min
R F
g m
STM8S005K6 STM8S005C6
Consumption
control
f HSE to core
Typ
16
STM8
Max
Unit
MHz

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