STM8S005K6 STMicroelectronics, STM8S005K6 Datasheet - Page 71

• Manufacturer Part Number: STM8S005K6
• Description: Value line, 16 MHz STM8S 8-bit MCU, 32 Kbytes Flash, data EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S005K6

• Program Memory: 32 Kbytes Flash; data retention 20 years at 55 °C after 100 cycles
• Data Memory: 128 bytes of true data EEPROM; endurance up to 100 k write/erase cycles
• Ram: 2 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8S005K6 STM8S005C6
Symbol
V
t
t
N
t
I
(1)
(2)
even when a write/erase operation addresses a single byte.
prog
erase
RET
DD
DD
RW
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Operating voltage (all modes,
execution/write/erase)
Standard programming time
(including erase) for
byte/word/block (1 byte/4
bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
memory)
Erase/write cycles(data memory)
Data retention (program memory)
after 100 erase/write cycles at T
= 85 °C
Data retention (data memory) after
10 k erase/write cycles at T
°C
Data retention (data memory) after
100 k erase/write cyclesat T
°C
Supply current (Flash
programming or erasing for 1 to
128 bytes)
Table 35: Flash program memory/data EEPROM memory
(2)
(program
DocID022186 Rev 2
A
A
= 85
= 85
(2)
A
Conditions
f
T
T
T
T
CPU
A
A
RET
RET
= 85 °C
= 85 ° C
≤ 16 MHz
= 55° C
= 85° C
Min
2.95
100
100 k
20
20
1
Electrical characteristics
(1)
Typ
6.0
3.0
3.0
2.0
Max
5.5
6.6
3.3
3.3
Unit
71/103
V
ms
ms
ms
cycles
years
mA