MPS650 ON Semiconductor, MPS650 Datasheet - Page 2
MPS650
Manufacturer Part Number
MPS650
Description
Small Signal High Current Npn, Package: TO-92 (TO-226), Pins=3
Manufacturer
ON Semiconductor
Datasheet
1.MPS650.pdf
(8 pages)
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ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (1)
SMALL–SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width
2. f T is defined as the frequency at which |h fe | extrapolates to unity.
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter On Voltage (I C = 1.0 A, V CE = 2.0 V)
Base–Emitter Saturation Voltage (I C = 1.0 A, I B = 100 mA)
Current–Gain — Bandwidth Product (2)
(I C = 50 mA, V CE = 2.0 V)
(I C = 500 mA, V CE = 2.0 V)
(I C = 1.0 A, V CE = 2.0 V)
(I C = 2.0 A, V CE = 2.0 V)
(I C = 2.0 A, I B = 200 mA)
(I C = 1.0 A, I B = 100 mA)
(I C = 50 mAdc, V CE = 5.0 Vdc, f = 100 MHz)
300 ms, Duty Cycle = 2.0%.
NPN MPS650 MPS651 PNP MPS750 MPS751
Characteristic
(T C = 25 C unless otherwise noted) (Continued)
http://onsemi.com
Figure 1.
2
V CE(sat)
V BE(sat)
V BE(on)
Symbol
h FE
f T
Min
75
75
75
40
—
—
—
—
75
Max
0.5
0.3
1.0
1.2
—
—
—
—
—
MHz
Unit
Vdc
Vdc
Vdc
—