MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 20

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
Table 13: TAP DC Electrical Characteristics
Notes 1, 2; 0°C £ T
NOTE:
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1.
2. Test conditions are specified using the load in Figure 10.
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
Timing for SRAM inputs and outputs is congruent with TDI and TDO, respectively, as shown in Figure 9.
t
CS and
DD
, HSTL, QDRb4 SRAM
t
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
A
£ +70°C; V
Test Mode Select
Test Data-Out
Test Data-In
Test Clock
DD
(TDO)
(TMS)
= 2.5V ±0.1V
(TCK)
(TDI)
1
Figure 9: TAP Timing
t MVTH
t DVTH
2
t THTL
t THMX
t THDX
20
t
TLTH
3
SYMBOL
t THTH
t
t
t
t
t
t
t
t
t
MVTH
THMX
DVTH
THDX
2.5V V
THTH
TLOX
TLOV
THTL
TLTH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
f
CH
CS
TF
DON’T CARE
4
t TLOX
DD
1 MEG x 18, 512K x 36
t TLOV
, HSTL, QDRb4 SRAM
5
MIN
100
40
40
10
10
10
10
10
10
UNDEFINED
0
6
MAX
10
20
©2003 Micron Technology, Inc.
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns