MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 14

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
1. Q00 refers to output from address A0 + 0. Q01 refers to output from the next internal burst address following
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A0 = A1, data Q20 = D10, Q21 = D11. Write data is forwarded immediately as read results.
A0, i.e., A0 + 1, etc.
DD
, HSTL, QDRb4 SRAM
W#
K#
R#
C#
A
D
Q
K
C
Qx3
NOP
1
t KHKL
t
IVKH
t KHCH
t KLKH
t AVKH t KHAX
A0
READ
2
t KHCH
t KHKH
t KHIX
t CHQX1
t KHKH
t CHQV
A1
3
WRITE
t KHK#H
READ/WRITE Timing
t DVKH
t KHDX
0.16µm Process
Q00
Figure 6:
t CHQV
t KHK#H
A2
D10
READ
4
Q01
14
D11
Q02
t
IVKH
t DVKH
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CHQX
A3
D12
t KHDX
5
WRITE
Q03
t KHIX
t CHQX
D13
DD
Q20
DON’T CARE
, HSTL, QDRb4 SRAM
D30
6
NOP
Q21
t KHKL
D31
Q22
t KLKH
D32
t CHQZ
UNDEFINED
7
Q23
512K x 18
©2002, Micron Technology Inc.
D33
ADVANCE