TIC226S Comset Semiconductor, TIC226S Datasheet

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TIC226S

Manufacturer Part Number
TIC226S
Description
SILICON BIDIRECTIONAL TRIODE THYRISTOR
Manufacturer
Comset Semiconductor
Datasheet

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Part Number
Manufacturer
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Part Number:
TIC226S
Manufacturer:
TI
Quantity:
12 500
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V
I
I
I
I
P
P
T
T
T
T(RMS)
TSM
TSM
GM
Symbol
C
stg
L
DRM
GM
G(AV)
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
8 A RMS
70 A Peak
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
High-temperature, High-current and high-voltage applications
Compliance to ROHS
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200
µs)
Average gate power dissipation at (or
below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
GT
SILICON BIDIRECTIONAL TRIODE THYRISTOR
of 50 mA (Quadrants 1-3)
SEMICONDUCTORS
Ratings
Page 1 of 3
100 200 300 400 500 600 700 800
A
B
C
-40 to +110
-40 to +125
D
Value
230
± 1
2.2
0.9
70
8
8
E
M
S
N
Unit
°C
°C
°C
W
W
V
A
A
A
A

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TIC226S Summary of contents

Page 1

... SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • RMS • Peak • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max (Quadrants 1-3) GT • High-temperature, High-current and high-voltage applications • ...

Page 2

... SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C. ...

Page 3

... SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Note 6: This parameters must be measured using pulse techniques, t contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the ...

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