BD707 STMicroelectronics, BD707 Datasheet - Page 2

• Manufacturer Part Number: BD707
• Description: COMPLEMENTARY SILICON POWER TRANSISTORS
• Manufacturer: STMicroelectronics

BD707/708/709/711/712
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
** Value for which I
For PNP types voltage and current values are negative.
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbo l
R
R
CEO(s us)
V
CE(sat)
V
h
thj -case
thj -case
I
I
I
CEK
CBO
CEO
EBO
BE
F E
f
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Knee Voltage
Base-Emitter Voltage
DC Current Gain
Transition frequency
(I
C
B
C
= 0)
= 0)
= 3.3 A at V
Parameter
E
B
= 0)
= 0)
CE
= 2V.
for BD707/708
for BD709
for BD711/712
T
for BD707/708
for BD709
for BD711/712
for BD707/708
for BD709
for BD711/712
V
I
for BD707/708
for BD709
for BD711/712
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
C
case
EB
= 100 mA
= 4 A
= 3 A
= 4 A
= 0.5 A
= 2 A
= 4 A
= 10 A
= 300 mA
= 5 V
case
= 150
= 25
Test Con ditions
o
C
o
C unless otherwise specified)
V
V
V
V
for BD707/708
for BD707/708
for BD709
V
V
V
V
V
V
V
V
V
V
I
I
V
CE
CE
CE
for BD709
CE
for BD711/712
B
B
CB
CB
CB
CB
CE
CE
CE
CB
CB
CE
CE
= 0.4 A
= **
= 2 V
= 2 V
= 4 V
= 4 V
= 60 V
= 100 V
= 60 V
= 100 V
= 30 V
= 50 V
= 3 V
= 80 V
= 80 V
= 40 V
= 4 V
Max
Max
Min.
100
60
80
40
30
30
15
5
3
T yp.
1.67
120
70
10
8
8
Max.
100
100
100
100
100
100
400
150
0.4
1.5
1
1
1
1
1
o
o
MHz
Unit
mA
mA
mA
mA
mA
mA
mA
C/W
C/W
V
V
V
V
V
V
A
A
A