TIC106C COMSET [Comset Semiconductor], TIC106C Datasheet - Page 2

• Manufacturer Part Number: TIC106C
• Description: P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
• Manufacturer: COMSET [Comset Semiconductor]

TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Note 6:
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
This parameters must be measured using pulse techniques, t
I
I
I
V
I
V
dv/dt
t
t
R
R
DRM
RRM
GT
H
gt
q
Symbol
GT
TM
∂JC
∂JA
Symbol
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state voltage
Critical rate of rise of off-state
voltage
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
SEMICONDUCTORS
Ratings
V
V
V
Ratings
AA
AA
Page 2 of 3
in
= 50 V
= 30 V, R
= 30 V, R
V
T
V
T
V
t
V
T
V
V
T
V
initiating I
V
initiating I
T
I
V
T
p(g)
R
R
R
TM
C
C
C
C
C
C
D
R
AA
AA
AA
AA
AA
AA
D
GK
GK
GK
W
= 110°C
= 110°C
= -40°C
= 110°C
= -40°C
= 110°C
= Rated V
= Rated V
= Rated V
= 5A (see Note6)
≥ 20µs
= 6 V, R
= 6 V, R
= 6 V, R
= 6 V, R
= 300µs, duty cycle ≤ 2 %, voltage-sensing
= 1 kΩ, t
= 1 kΩ, t
= 1 kΩ, t
= 6 V, R
= 6 V, R
L
L
Test Condition(s)
= 6 Ω, R
= 6 Ω, I
T
T
= 10 mA
= 10 mA,
L
L
L
L
DRM
RRM
D
p(g)
p(g)
p(g)
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
, R
RM
GK(eff)
, R
, I
≥ 20µs,
≥ 20µs,
≥ 20µs,
GK
GK
GK
≈ 8 A
G
GK
= 1 kΩ,
= 0,
= 5 kΩ,
= 1 kΩ,
= 1 kΩ,
= 1 kΩ,
Min Typ Mx Unit
0.4
0.2
≤ 62.5
Value
-
-
-
-
-
-
-
-
≤ 3.5
1.75
7.7
0.6
60
10
-
-
-
-
-
-
-
400
200
1.2
1.7
1
1
5
8
-
-
°C/W
Unit
µs
V/µs
mA
mA
µA
µA
V
V