TIC246B COMSET [Comset Semiconductor], TIC246B Datasheet
TIC246B
Manufacturer Part Number
TIC246B
Description
SILICON BIDIRECTIONAL TRIODE THYRISTOR
Manufacturer
COMSET [Comset Semiconductor]
Datasheet
1.TIC246B.pdf
(3 pages)
V
I
I
I
T
T
T
Symbol
T(RMS)
TSM
GM
C
stg
L
DRM
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Notes:
•
•
•
•
•
•
•
•
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
High current triacs
16 A RMS
70 A Peak
Glass Passivated Wafer
200 V to 800 V Off-State Voltage
Max I
125 A peak current
Compliance to ROHS
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
1.
linearly to 110°C case temperature at the rate of 400 mA/°C.
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
GT
SILICON BIDIRECTIONAL TRIODE THYRISTOR
of 50 mA (Quadrants 1-3)
SEMICONDUCTORS
Ratings
Page 1 of 3
200
B
300
C
400
D
-40 to +110
-40 to +125
Value
500
125
230
± 1
16
E
600
M
700
S
800
N
Unit
°C
°C
°C
V
A
A
A
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TIC246B Summary of contents
Page 1
... SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • High current triacs • RMS • Peak • Glass Passivated Wafer • 200 V to 800 V Off-State Voltage • Max (Quadrants 1-3) GT • 125 A peak current • ...
Page 2
... SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S THERMAL CHARACTERISTICS Symbol R Junction to case thermal resistance ∂JC R Junction to free air thermal resistance ∂JA ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Repetitive peak off- I DRM state current I Gate trigger current GT V Gate trigger voltage ...
Page 3
... SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Page Main Terminal 1 Main Terminal 2 Gate ...