LM2623LDX NSC [National Semiconductor], LM2623LDX Datasheet - Page 5

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LM2623LDX

Manufacturer Part Number
LM2623LDX
Description
General Purpose, Gated Oscillator Based, DC/DC Boost Converter
Manufacturer
NSC [National Semiconductor]
Datasheet
Electrical Characteristics
(Continued)
Note 8: Junction to ambient thermal resistance (θ
) is taken from a thermal modeling result, performed under the conditions and guidelines set forthe in the JEDEC
JA
standard JESD51-17. The test board is a 4 layer FR-4 board measuring 102mm x 76mm x 1.6mm with a 3 x 2 array of thermal vias. The ground plane on the board
is 50mm x 50 mm. Thickness of copper layers are 36mm/18mm/18mm/36mm (1.5oz/10z/1oz/1.5ox). Ambient temperature in simulation is 22˚C, still air. Power
dissipation is 1W. (The DAP is soldered.) Fore more information on LLP thermal topics, as well as LLP mounting and soldering specifications please refer to
Application Note 1187: Leadless Leadframe Package (LLP).
Note 9: Exposed DAP soldered to an exposed 1sq. inch area of 1 oz. copper. Thermal resistance can be decreased by using more copper are to dissipate heat.
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