BFP840FESDH6327XTSA1 Infineon Technologies
BFP840FESDH6327XTSA1
Manufacturer Part Number
BFP840FESDH6327XTSA1
Description
Transistors RF Bipolar Power RF BIP TRANSISTORS
Manufacturer
Infineon Technologies
Specifications of BFP840FESDH6327XTSA1
Configuration
Dual
Dc Collector/base Gain Hfe Min
150
Maximum Operating Frequency
85 GHz
Collector- Emitter Voltage Vceo Max
2.25 V
Emitter- Base Voltage Vebo
2.6 V
Continuous Collector Current
35 mA
Maximum Dc Collector Current
400 nA
Power Dissipation
75 mW
Package / Case
TSFP-4
Gain Bandwidth Product Ft
2 GHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Part # Aliases
BFP840FESDH6327 BFP840FESDH6327XT