IS61LV6416-10TL-TR ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TL-TR Datasheet - Page 6

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IS61LV6416-10TL-TR

Manufacturer Part Number
IS61LV6416-10TL-TR
Description
IC SRAM 1MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV6416-10TL-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Density
1Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
120mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
64K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
IS61LV6416
IS61LV6416L
AC WAVEFORMS
READ CYCLE NO. 1
READ CYCLE NO. 2
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
6
ADDRESS
ADDRESS
LB, UB
D
D
OUT
OUT
OE
CE
HIGH-Z
(1,2)
(1,3)
PREVIOUS DATA VALID
t
LZB
(Address Controlled) (CS = OE = V
t
LZCE
t
AA
t
DOE
t
LZOE
t
ACE
t
BA
t
OHA
t
RC
IL
.
t
AA
t
RC
DATA VALID
IL
, UB or LB = V
DATA VALID
t
t
t
HZOE
HZCE
HZB
Integrated Silicon Solution, Inc.
t
OHA
t
IL
OHA
)
READ1.eps
ISSI
11/22/05
Rev. I
®

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