BC817 /T3 NXP Semiconductors, BC817 /T3 Datasheet - Page 17
BC817 /T3
Manufacturer Part Number
BC817 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet
1.BC817-16W_T3.pdf
(19 pages)
Specifications of BC817 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC817,235
NXP Semiconductors
10. Revision history
Table 10.
BC817_BC817W_BC337_6
Product data sheet
Document ID
BC817_BC817W_
BC337_6
Modifications:
BC817_BC817W_
BC337_5
BC817_4
BC817W_SER_4
BC337_3
Revision history
Release date
20091117
20050121
20040105
20040225
19990415
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3
Figure 13 “Package outline SOT23
Figure 14 “Package outline SOT323
“Pinning”: updated
Rev. 06 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
BC817; BC817W; BC337
(TO-236AB)”: updated
45 V, 500 mA NPN general-purpose transistors
(SC-70)”: updated
Change notice
-
CPCN200302007F1 BC817_4;
-
-
-
Supersedes
BC817_BC817W_
BC337_5
BC817W_SER_4;
BC337_3
BC817_3
BC817W_SER_3
BC337_338_CNV_2
© NXP B.V. 2009. All rights reserved.
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