IRF3710 International Rectifier Corp., IRF3710 Datasheet
IRF3710
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IRF3710 Summary of contents
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... Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. 0. 91309B IRF3710 ® HEXFET Power MOSFET 100V DSS R = 23mΩ DS(on 57A D S TO-220AB Max. Units 230 ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 16V 10V 7.0V 6.0V 5.0V 100 4.5V 4.0V BOTTOM 3. 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...
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0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 10 ...
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T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...
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D.U 20V V GS 0.01 Ω Charge 6 550 15V 440 DRIVER + 330 ...
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D.U.T + - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...
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Y6HQG ) UCDTÃDTÃ6 IÃDSA Ã GP UÃ8P9 Ã &'( 6TT H7G 9ÃP IÃXXÃ (Ã ((& DI ÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" This product has been designed and qualified for the Automotive [Q101] ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...