PESD3V3S2UT,215 NXP Semiconductors, PESD3V3S2UT,215 Datasheet - Page 2

• Manufacturer Part Number: PESD3V3S2UT,215
• Description: DIODE DBL ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.2V
• Power (watts): 330W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 7 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 18 A
• Peak Pulse Power Dissipation: 330 W
• Capacitance: 207 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4046-2; 934058196215; PESD3V3S2UT T/R; PESD3V3S2UT T/R

NXP Semiconductors
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: P
• Low clamping voltage: V
• Ultra-low reverse leakage current: I
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
2004 Apr 15
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Double ESD protection diodes in SOT23
package
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER
pp
(CL)R
pp
= 18 A at t
= 330 W at t
= 20 V at I
MARKING CODE
RM
p
< 700 nA
= 8/20 µs.
*U9
*U1
*U2
*U3
*U4
pp
p
= 8/20 µs
= 18 A
(1)
2
QUICK REFERENCE DATA
PINNING
V
C
SYMBOL
RWM
d
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
1
2
reverse stand-off
voltage
diode capacitance
V
f = 1 MHz
number of
protected lines
R
PARAMETER
= 0 V;
cathode 1
cathode 2
common anode
001aaa490
PESDxS2UT series
3
DESCRIPTION
3.3, 5.2, 12, 15
and 24
207, 152, 38, 32
and 23
2
1
2
Product data sheet
VALUE
sym022
3
V
pF
UNIT