PESD3V3S2UT,215 NXP Semiconductors, PESD3V3S2UT,215 Datasheet - Page 6

• Manufacturer Part Number: PESD3V3S2UT,215
• Description: DIODE DBL ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.2V
• Power (watts): 330W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 7 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 18 A
• Peak Pulse Power Dissipation: 330 W
• Capacitance: 207 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4046-2; 934058196215; PESD3V3S2UT T/R; PESD3V3S2UT T/R

NXP Semiconductors
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
2004 Apr 15
R
Double ESD protection diodes in SOT23
package
diff
(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT
T
t
Fig.4
SYMBOL
p
P
(W)
amb
= 8/20 µs exponential decay waveform; see Fig.2.
pp
10
10
10
10
= 25 °C.
4
3
2
1
Peak pulse power dissipation as a function
of pulse time; typical values.
differential resistance
10
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
PARAMETER
10
2
(1)
(2)
10
3
001aaa147
t
p
(µs)
10
4
I
I
I
I
I
R
R
R
R
R
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 0.5 mA
CONDITIONS
6
Fig.5
P
PP(25°C)
P
PP
1.2
0.8
0.4
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
0
0
−
−
−
−
−
MIN.
50
PESDxS2UT series
−
−
−
−
−
TYP.
100
Product data sheet
400
80
200
225
300
MAX.
150
001aaa193
T
j
(°C)
Ω
Ω
Ω
Ω
Ω
UNIT
200