PESD3V3S2UT,215 NXP Semiconductors, PESD3V3S2UT,215 Datasheet - Page 8

• Manufacturer Part Number: PESD3V3S2UT,215
• Description: DIODE DBL ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.2V
• Power (watts): 330W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 7 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 18 A
• Peak Pulse Power Dissipation: 330 W
• Capacitance: 207 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4046-2; 934058196215; PESD3V3S2UT T/R; PESD3V3S2UT T/R

NXP Semiconductors
2004 Apr 15
Double ESD protection diodes in SOT23
package
I
PESD12V52UT; V
PESD15VS2UT; V
PESD24VS2UT; V
Fig.8
(1) PESD3V3S2UT; V
R
is less than 10 nA at 150 °C for:
I
R(25˚C)
PESD5V2S2UT; V
I
R
10
10
−1
1
−100
Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
RWM
RWM
RWM
−50
= 12 V.
RWM
RWM
= 15 V.
= 24 V.
= 3.3 V.
= 5 V.
0
(1)
50
100
001aaa270
T
j
(°C)
150
8
PESDxS2UT series
Product data sheet