ST72F325AR9T6 STMicroelectronics, ST72F325AR9T6 Datasheet - Page 156
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ST72F325AR9T6
Manufacturer Part Number
ST72F325AR9T6
Description
MCU 8BIT 60KB FLASH/ROM 64-TQFP
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet
1.ST72F325K6T6.pdf
(197 pages)
Specifications of ST72F325AR9T6
Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
48
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3.8 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP, 64-VQFP
Processor Series
ST72F3x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
48
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
ST7232X-EVAL, ST7232X-SK/RAIS, ST72325-D/RAIS, ST7MDT20-DVP3, ST7MDT20J-EMU3, ST7MDT20M-EMU3, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
A/d Bit Size
10 bit
A/d Channels Available
16
Height
1.4 mm
Length
10 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
3.8 V, 4.5 V
Width
10 mm
For Use With
497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-5600
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ST72F325AR9T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
ST72325xx
12.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
12.7.1 Functional EMS (Electro Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■
■
A device reset allows normal operations to be re-
sumed. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
12.7.1.1 Designing hardened software to avoid
noise problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
tion environment and simplified MCU software. It
156/197
Symbol
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
V
V
FESD
FFTB
Voltage limits to be applied on any I/O pin to induce a
functional disturbance
Fast transient voltage burst limits to be applied
through 100pF on V
tional disturbance
DD
Parameter
DD
and V
and V
DD
pins to induce a func-
SS
through
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behaviour
is detected, the software can be hardened to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015)
.
All Flash and ROM devices, V
T
1000-4-2
LQFP44, V
f
OSC
A
=+25°C, f
= 8 MHz, conforms to IEC 1000-4-4
DD
OSC
=5V, T
Conditions
=8 MHz, conforms to IEC
A
=+25°C,
DD
=5V,
Level/
Class
3B
3B