D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 854
D12321VF25V
Manufacturer Part Number
D12321VF25V
Description
IC H8S/2300 MCU ROMLESS 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of D12321VF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
86
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
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Section 19 ROM
19.17
There are three kinds of flash memory program/erase protection: hardware protection, software
protection, and error protection.
19.17.1 Hardware Protection
Hardware protection refers to a state in which programming/erasing of flash memory is forcibly
disabled or aborted. Settings in flash memory control registers 1 and 2 (FLMCR1, FLMCR2) and
erase block registers 1 and 2 (EBR1, EBR2) are reset (see table 19.10).
Table 19.32 Hardware Protection
Item
FWE pin protection
Reset/standby
protection
19.17.2 Software Protection
Software protection can be implemented by setting the SWE bit in flash memory control register 1
(FLMCR1), erase block registers 1 and 2 (EBR1, EBR2), and the RAMS bit in the RAM
emulation register (RAMER). When software protection is in effect, setting the P or E bit in
FLMCR1 does not cause a transition to program mode or erase mode (see table 19.33).
Rev.6.00 Sep. 27, 2007 Page 822 of 1268
REJ09B0220-0600
Flash Memory Protection
Description
•
•
•
When a low level is input to the FWE pin,
FLMCR1, FLMCR2, EBR1, and EBR2 are
initialized, and the program/erase-protected
state is entered.
In a reset (including a WDT overflow reset)
and in standby mode, FLMCR1, FLMCR2,
EBR1, and EBR2 are initialized, and the
program/erase-protected state is entered.
In a reset via the RES pin, the reset state is
not entered unless the RES pin is held low
until oscillation stabilizes after powering on.
In the case of a reset during operation, hold
the RES pin low for the RES pulse width
specified in section 22.2.3, AC
Characteristics.
Program
Yes
Yes
Functions
Erase
Yes
Yes
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