MC9S12E128CPVE Freescale Semiconductor, MC9S12E128CPVE Datasheet - Page 566

• Manufacturer Part Number: MC9S12E128CPVE
• Description: IC MCU 128K FLASH 25MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12E128CPVE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 91
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 2.75 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: S12E
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 92
• Number Of Timers: 12
• Operating Supply Voltage: 3.135 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 16-ch x 10-bit
• On-chip Dac: 2-ch x 8-bit
• Controller Family/series: HCS12/S12X
• No. Of I/o's: 90
• Ram Memory Size: 8KB
• Cpu Speed: 25MHz
• No. Of Timers: 4
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• For Use With: M68EVB912E128 - BOARD EVAL FOR MC9S12E128/64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Appendix A Electrical Characteristics
A.1.6
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
566
Human Body
Machine
Latch-up
Num
1
2
3
4
5
Model
C
C
C
C
C
C
ESD Protection and Latch-up Immunity
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up Current at 125 C
Latch-up Current at 27 C
positive
negative
positive
negative
positive
negative
positive
negative
Table A-3. ESD and Latch-Up Protection Characteristics
Table A-2. ESD and Latch-up Test Conditions
MC9S12E128 Data Sheet, Rev. 1.07
Rating
Description
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
R1
R1
—
—
—
—
—
—
C
C
2000
+100
+200
-100
-200
Min
200
500
Freescale Semiconductor
Value
1500
–2.5
100
200
7.5
–
3
3
0
3
3
Max
—
—
—
—
—
—
—
Ohm
Ohm
Unit
Unit
pF
pF
mA
mA
V
V
V
V
V