MC9S12XEP100CAL Freescale Semiconductor, MC9S12XEP100CAL Datasheet - Page 1079

• Manufacturer Part Number: MC9S12XEP100CAL
• Description: IC MCU 16BIT 1M FLASH 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XEP100CAL

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 50MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 91
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: S12XE
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 64 KB
• Interface Type: CAN/SCI/SPI
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 91
• Number Of Timers: 25
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 16-ch x 12-bit
• Package: 112LQFP
• Family Name: HCS12X
• Maximum Speed: 50 MHz
• Operating Supply Voltage: 1.8|2.8|5 V
• For Use With: EVB9S12XEP100 - BOARD EVAL FOR MC9S12XEP100DEMO9S12XEP100 - BOARD DEMO FOR MC9S12XEP100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 28
768 KByte Flash Module (S12XFTM768K4V2)
28.1
The FTM768K4 module implements the following:
Freescale Semiconductor
Revision
Number
V02.09
V02.10
V02.11
•
768 Kbytes of P-Flash (Program Flash) memory, consisting of 4 physical Flash blocks, intended
primarily for nonvolatile code storage
Introduction
29 Nov 2007
19 Dec 2007
25 Sep 2009
Revision
Date
28.4.2/28-1115
28.4.2/28-1115
28.3.1/28-1084
28.3.2/28-1089
28.1/28-1079
28.4.2.12/28-
28.4.2.12/28-
28.4.2.12/28-
28.4.2.20/28-
28.6/28-1140
28.3.2.1/28-
28.4.2.4/28-
28.4.2.7/28-
28.3.2.1/28-
28.4.1.2/28-
Sections
Affected
1091
1118
1121
1125
1125
1125
1134
1091
1110
MC9S12XE-Family Reference Manual , Rev. 1.23
Table 28-1. Revision History
- Cleanup
- Updated Command Error Handling tables based on parent-child relationship
with FTM1024K5
- Corrected Error Handling table for Full Partition D-Flash, Partition D-Flash,
and EEPROM Emulation Query commands
- Corrected P-Flash Memory Addressing table
- Clarify single bit fault correction for P-Flash phrase
- Expand FDIV vs OSCCLK Frequency table
- Add statement concerning code runaway when executing Read Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Program Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Verify Backdoor
Access Key command from Flash block containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset”
- Add ACCERR condition for Disable EEPROM Emulation command
The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
Description of Changes
1079