MC9S12XEP100CAL Freescale Semiconductor, MC9S12XEP100CAL Datasheet - Page 1114

IC MCU 16BIT 1M FLASH 112-LQFP

MC9S12XEP100CAL

Manufacturer Part Number
MC9S12XEP100CAL
Description
IC MCU 16BIT 1M FLASH 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12XEP100CAL

Core Processor
HCS12X
Core Size
16-Bit
Speed
50MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
91
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Processor Series
S12XE
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
64 KB
Interface Type
CAN/SCI/SPI
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
91
Number Of Timers
25
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
Minimum Operating Temperature
- 40 C
On-chip Adc
16-ch x 12-bit
Package
112LQFP
Family Name
HCS12X
Maximum Speed
50 MHz
Operating Supply Voltage
1.8|2.8|5 V
For Use With
EVB9S12XEP100 - BOARD EVAL FOR MC9S12XEP100DEMO9S12XEP100 - BOARD DEMO FOR MC9S12XEP100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Chapter 28 768 KByte Flash Module (S12XFTM768K4V2)
28.4.1.4
Table 28-31
Flash block and other resources within the Flash module.
28.4.1.5
Table 28-32
on the D-Flash block and EEE operation.
1114
FCMD
FCMD
0x0C
0x0D
0x0A
0x0B
0x0E
0x01
0x02
0x03
0x04
0x05
0x06
0x07
0x08
0x09
0x01
0x02
Erase Verify Block
Erase Verify Block
Program P-Flash
summarizes the valid P-Flash commands along with the effects of the commands on the P-
summarizes the valid D-Flash and EEE commands along with the effects of the commands
Erase All Blocks
Set User Margin
Set Field Margin
Load Data Field
Unsecure Flash
Verify Backdoor
Erase Verify All
Erase Verify All
P-Flash Commands
Erase Verify P-
D-Flash and EEE Commands
Program Once
Erase P-Flash
Erase P-Flash
Flash Section
Access Key
Read Once
Command
Command
Blocks
Sector
Blocks
Block
Level
Level
Verify that all D-Flash (and P-Flash) blocks are erased.
Verify that the D-Flash block is erased.
Verify that all P-Flash (and D-Flash) blocks are erased.
Verify that a P-Flash block is erased.
Verify that a given number of words starting at the address provided are erased.
Read a dedicated 64 byte field in the nonvolatile information register in P-Flash block 0
that was previously programmed using the Program Once command.
Load data for simultaneous multiple P-Flash block operations.
Program a phrase in a P-Flash block and any previously loaded phrases for any other P-
Flash block (see Load Data Field command).
Program a dedicated 64 byte field in the nonvolatile information register in P-Flash block
0 that is allowed to be programmed only once.
Erase all P-Flash (and D-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the EPDIS and EPOPEN bits in the EPROT register are
set prior to launching the command.
Erase a single P-Flash block.
An erase of the full P-Flash block is only possible when FPLDIS, FPHDIS and FPOPEN
bits in the FPROT register are set prior to launching the command.
Erase all bytes in a P-Flash sector.
Supports a method of releasing MCU security by erasing all P-Flash (and D-Flash) blocks
and verifying that all P-Flash (and D-Flash) blocks are erased.
Supports a method of releasing MCU security by verifying a set of security keys.
Specifies a user margin read level for all P-Flash blocks.
Specifies a field margin read level for all P-Flash blocks (special modes only).
MC9S12XE-Family Reference Manual , Rev. 1.23
Table 28-31. P-Flash Commands
Table 28-32. D-Flash Commands
Function on D-Flash Memory
Function on P-Flash Memory
Freescale Semiconductor

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