MC912DG128AMPVE Freescale Semiconductor, MC912DG128AMPVE Datasheet - Page 118

• Manufacturer Part Number: MC912DG128AMPVE
• Description: IC MCU 128K FLASH 8MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC912DG128AMPVE

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: HC912D
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 69
• Number Of Timers: 8
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FEECTL — Flash EEPROM Control Register
Flash Memory
Technical Data
118
RESET:
Bit 7
0
0
6
0
0
BOOTP — Boot Protect
FEESWAI — Flash EEPROM Stop in Wait Control
HVEN — High-Voltage Enable
ERAS — Erase Control
The boot blocks are located at $E000–$FFFF and $A000–$BFFF for
odd program pages for each Flash EEPROM module. Since boot
programs must be available at all times, the only useful boot block is
at $E000–$FFFF location. All paged boot blocks can be used as
protected program space if desired.
This register controls the programming and erasure of the Flash
EEPROM.
This bit enables the charge pump to supply high voltages for program
and erase operations in the array. HVEN can only be set if either PGM
or ERAS are set and the proper sequence for program or erase is
followed.
This bit configures the memory for erase operation. ERAS is
interlocked with the PGM bit such that both bits cannot be equal to 1
or set to1 at the same time.
Freescale Semiconductor, Inc.
For More Information On This Product,
0 = Enable erase and program of 8K byte boot block
1 = Disable erase and program of 8K byte boot block
0 = Disables high voltage to array and charge pump off
1 = Enables high voltage to array and charge pump on
0 = Erase operation is not selected.
1 = Erase operation selected.
0 = Do not halt Flash EEPROM clock when the part is in wait
1 = Halt Flash EEPROM clock when the part is in wait mode.
5
0
0
mode.
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FEESWAI
Flash Memory
4
0
HVEN
3
0
2
0
0
MC68HC912DT128A — Rev 4.0
ERAS
1
0
PGM
Bit 0
0
MOTOROLA
$00F7