MC912DG128AMPVE Freescale Semiconductor, MC912DG128AMPVE Datasheet - Page 128

• Manufacturer Part Number: MC912DG128AMPVE
• Description: IC MCU 128K FLASH 8MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC912DG128AMPVE

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: HC912D
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 69
• Number Of Timers: 8
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

EEMCR — EEPROM Module Configuration
EEPROM Memory
Technical Data
128
1. Bit 5 has a test function and should not be programmed.
2. The FPOPEN bit is available only on the 0L05H and later mask sets. For previous masks, this bit is reserved.
3. Loaded from SHADOW word.
RESET:
NOBDML
Bit 7
—
NOTE:
NOTE:
(3)
NOSHW
—
6
(3)
Bits[7:4] are loaded at reset from the EEPROM SHADOW word.
The bits 5 and 4 are reserved for test purposes. These locations in
SHADOW word should not be programmed otherwise some locations of
regular EEPROM array will not be more visible.
NOBDML — Background Debug Mode Lockout Disable
NOSHW — SHADOW Word Disable
Bit 6 from high byte of SHADOW word should not be programmed in
order to have the full EEPROM array visible.
Loaded from SHADOW word at reset.
Read anytime. Write anytime in special modes (SMODN=0).
Loaded from SHADOW word at reset.
Read anytime. Write anytime in special modes (SMODN=0).
When NOSHW cleared, the regular EEPROM array bytes at address
$0FC0 and $0FC1 are not visible. The SHADOW word is accessed
instead for both read and program/erase operations. Bits[7:4] from
the high byte of the SHADOW word, $0FC0, are loaded to
EEMCR[7:4]. Bits[1:0] from the high byte of the SHADOW word,
$0FC0,are loaded to EEDIVH[1:0]. Bits[7:0] from the low byte of the
SHADOW word, $0FC1,are loaded to EEDIVL[7:0]. BULK
program/erase only applies if SHADOW word is enabled.
Freescale Semiconductor, Inc.
Reserved
For More Information On This Product,
0 = The BDM lockout is enabled.
1 = The BDM lockout is disabled.
0 = The SHADOW word is enabled and accessible at address
1 = Regular EEPROM array at address $0FC0-$0FC1.
—
5
(3)
$0FC0-$0FC1.
(1)
Go to: www.freescale.com
FPOPEN
EEPROM Memory
—
4
(3)
(2)
3
1
1
EESWAI
2
1
PROTLCK
MC68HC912DT128A — Rev 4.0
1
0
DMY
Bit 0
0
MOTOROLA
$00F0