DF2398F20V Renesas Electronics America, DF2398F20V Datasheet - Page 681

• Manufacturer Part Number: DF2398F20V
• Description: IC H8S/2300 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398F20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

19.22.4 Memory Read Mode
Table 19-42 AC Characteristics in Memory Read Mode
Conditions: V
After the end of an auto-program, auto-erase, or status read operation, the command wait state is entered. To read
memory contents, a transition must be made to memory read mode by means of a command write before the read is
executed.
Command writes can be performed in memory read mode, just as in the command wait state.
Once memory read mode has been entered, consecutive reads can be performed.
After power-on, memory read mode is entered.
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Item
A
Note: Data is latched at the rising edge of WE.
CC
18
to A
Data
= 5.0 V 10%, V
WE
OE
CE
Figure 19-55 Memory Read Mode Timing Waveforms after Command Write
0
SS
= 0 V, T
t
ces
Command write
t
f
t
t
t
t
t
t
t
t
Symbol
nxtc
ceh
ces
dh
ds
wep
r
f
a
t
wep
= 25 C 5 C
t
ds
H'00
t
dh
t
t
ceh
r
Min
20
0
0
50
50
70
—
—
t
nxtc
—
—
—
—
—
—
30
30
Max
Memory read mode
Address stable
Rev.6.00 Oct.28.2004 page 651 of 1016
Data
ns
ns
ns
ns
ns
ns
ns
Unit
s
REJ09B0138-0600H