PIC16F57-I/P Microchip Technology, PIC16F57-I/P Datasheet - Page 62

• Manufacturer Part Number: PIC16F57-I/P
• Description: IC MCU FLASH 2KX12 28DIP
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F57-I/P

• Program Memory Type: FLASH
• Program Memory Size: 3KB (2K x 12)
• Package / Case: 28-DIP (0.600", 15.24mm)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: POR, WDT
• Number Of I /o: 20
• Ram Size: 72 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 72 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 20
• Number Of Timers: 1
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: DV164120, DV164101, ICE2000
• Minimum Operating Temperature: - 40 C
• Data Rom Size: 2 K
• Height: 3.3 mm
• Length: 34.67 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Width: 7.24 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT28XP - SOCKET TRANSITION ICE 28DIPAC164001 - MODULE SKT PROMATEII 18/28DIP
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC16F5X
11.1
DS41213D-page 60
DC CHARACTERISTICS
D001
D002
D003
D004
D010
D020
Note 1:
Param
No.
2:
3:
*
† Data in “Typ” column is based on characterization results at 25°C. This data is for design guidance only and
V
V
V
S
I
I
DC Characteristics: PIC16F5X (Industrial)
Sym.
DD
PD
DD
DR
POR
VDD
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
a) The test conditions for all I
These parameters are characterized but not tested.
is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature, also have an impact on
the current consumption.
Does not include current through R
I
R
= V
mode. The Power-down Current in Sleep mode does not depend on the oscillator type.
wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
disabled as specified.
Supply Voltage
RAM Data Retention Voltage
V
Power-on Reset
V
Power-on Reset
Supply Current
Power-down Current
DD
DD
DD
/2R
Start Voltage to ensure
Rise Rate to ensure
Characteristic/Device
EXT
(mA) with R
(2)
DD
(2)
EXT
can be lowered in Sleep mode without losing RAM data.
DD
in kΩ.
measurements in Active Operation mode are: OSC1 = external square
(1)
EXT
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C ≤ T
0.05*
. The current through the resistor can be estimated by the formula:
Min. Typ† Max. Units
2.0
—
—
—
—
—
—
—
—
1.5*
Vss
170
0.4
1.7
1.0
0.5
15
—
—
22.5
350
5.5
1.0
5.0
6.0
2.5
—
—
—
SS
V/ms See Section 5.1 “Power-on Reset
mA
mA
μA
μA
μA
μA
V
V
V
, T0CKI = V
Device in Sleep mode
See Section 5.1 “Power-on Reset
(POR)” for details on Power-on Reset
(POR)” for details on Power-on Reset
F
mode
F
F
F
WDT disabled
V
V
OSC
OSC
OSC
OSC
DD
DD
= 2.0V, WDT enabled
= 2.0V, WDT disabled
(3)
= 4 MHz, V
= 10 MHz, V
= 20 MHz, V
= 32 kHz, V
DD
A
≤ +85°C for industrial
, MCLR = V
© 2007 Microchip Technology Inc.
Conditions
DD
DD
DD
DD
= 2.0V, XT or RC
= 2.0V, LP mode,
DD
= 3.0V, HS mode
= 5.0V, HS mode
; WDT enabled/