AT90PWM316-16SUR Atmel, AT90PWM316-16SUR Datasheet - Page 20
![MCU AVR 16K FLASH 16MHZ 32-SOIC](/photos/7/29/72992/313-32-soic_sml.jpg)
AT90PWM316-16SUR
Manufacturer Part Number
AT90PWM316-16SUR
Description
MCU AVR 16K FLASH 16MHZ 32-SOIC
Manufacturer
Atmel
Series
AVR® 90PWM Lightingr
Datasheet
1.AT90PWM216-16SU.pdf
(359 pages)
Specifications of AT90PWM316-16SUR
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
27
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-SOIC (7.5mm Width)
For Use With
ATSTK600-SOIC - STK600 SOCKET/ADAPTER FOR SOICATAVRMC200 - KIT EVAL FOR AT90PWM3 ASYNCATAVRFBKIT - KIT DEMO BALLAST FOR AT90PWM2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
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6.3
6.3.1
20
EEPROM Data Memory
AT90PWM216/316
EEPROM Read/Write Access
Figure 6-3.
The AT90PWM216/316 contains 512 bytes of data EEPROM memory. It is organized as a sep-
arate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI and Parallel data downloading to the EEPROM, see
Downloading” on page
mands” on page 284
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
For details on how to avoid problems in these situations
tion” on page 25.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
CC
is likely to rise or fall slowly on power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Address
clk
Data
Data
WR
CPU
RD
respectively.
295, and
Compute Address
“Parallel Programming Parameters, Pin Mapping, and Com-
T1
Memory Access Instruction
Table
Address valid
T2
seeSee “Preventing EEPROM Corrup-
6-2. A self-timing function, however,
Next Instruction
T3
7710E–AVR–08/10
“Serial
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