ATXMEGA256A3B-MH Atmel, ATXMEGA256A3B-MH Datasheet - Page 384
![MCU AVR 256KB FLASH A3B 64-QFN](/photos/12/13/121326/313-64-qfn_sml.jpg)
ATXMEGA256A3B-MH
Manufacturer Part Number
ATXMEGA256A3B-MH
Description
MCU AVR 256KB FLASH A3B 64-QFN
Manufacturer
Atmel
Series
AVR® XMEGAr
Specifications of ATXMEGA256A3B-MH
Core Processor
AVR
Core Size
8/16-Bit
Speed
32MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
49
Program Memory Size
256KB (128K x 16)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.6 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-MLF®, 64-QFN
Processor Series
ATXMEGA256x
Core
AVR8
Data Bus Width
8 bit, 16 bit
Data Ram Size
16 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
49
Number Of Timers
7
Operating Supply Voltage
1.6 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 8 Channel
On-chip Dac
12 bit, 2 Channel
For Use With
ATAVRONEKIT - KIT AVR/AVR32 DEBUGGER/PROGRMMRATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ATXMEGA256A3B-MU
ATXMEGA256A3B-MU
ATXMEGA256A3B-MU
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATXMEGA256A3B-MH
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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- Download datasheet (6Mb)
30.12.3.6
30.12.3.7
30.12.3.8
30.12.3.9
30.12.3.10
8077H–AVR–12/09
Write Page
Erase & Write Page
Erase Application/ Boot Loader/ EEPROM Section
Application / Boot Section CRC
Flash CRC
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Write Application Section Page, Write Boot Loader Section Page, Write User Signature Row
and Write EEPROM Page is used to write a loaded Flash/EEPROM page buffer into the
selected memory space
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Erase & Write Application Section Page, Erase & Write Boot Loader Section Page, and
Erase & Write EEPROM Page is used to erase one page and then write a loaded
Flash/EEPROM page buffer into that page in the selected memory space, in one atomic
operation.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Erase Application Section, Erase Boot Loader Section and Erase EEPROM Section com-
mand is used to erase the complete section selected.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Application Section CRC and Boot Loader Section CRC commands can be used to verify
the content of the selected section after programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished. The CRC
checksum will be available in the NVM DATA register.
The Flash CRC command can be used to verify the content of the Flash Program Memory after
programming. The command can be executed independent of the lock bit state.
1. Load the NVM CMD register with Erase Application Section/Boot Loader Section/User
2. Write the selected page by doing a PDI Write. The page is written by addressing any
1. Load the NVM CMD register with Write Application Section/Boot Loader Section/User
2. Write the selected page by doing a PDI Write. The page is written by addressing any
1. Load the NVM CMD register with Erase & Write Application Section/Boot Loader Sec-
2. Write the selected page by doing a PDI Write. The page is written by addressing any
1. Load the NVM CMD register with Erase Application/ Boot/ EEPROM Section command
2. Write the selected section by doing a PDI Write. The section is written by addressing
1. Load the NVM CMD register with Application/ Boot Loader Section CRC command
2. Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Signature Row/EEPROM Page command.
byte location within the page.
Signature Row/EEPROM Page command.
byte location within the page.
tion/User Signature Row/EEPROM Page command.
byte location within the page.
any byte location within the section.
during self-programming.
XMEGA A
384
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