MC56F8011VFAE Freescale Semiconductor, MC56F8011VFAE Datasheet - Page 117
MC56F8011VFAE
Manufacturer Part Number
MC56F8011VFAE
Description
IC DIGITAL SIGNAL CTLR 32-LQFP
Manufacturer
Freescale Semiconductor
Series
56F8xxxr
Datasheet
1.MC56F8013VFAE.pdf
(126 pages)
Specifications of MC56F8011VFAE
Core Processor
56800
Core Size
16-Bit
Speed
32MHz
Connectivity
I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
26
Program Memory Size
12KB (6K x 16)
Program Memory Type
FLASH
Ram Size
1K x 16
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 6x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-LQFP
Product
DSCs
Data Bus Width
16 bit
Processor Series
MC56F80xx
Core
56800E
Numeric And Arithmetic Format
Fixed-Point
Device Million Instructions Per Second
32 MIPs
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
26
Data Ram Size
2 KB
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Development Tools By Supplier
MC56F8037EVM, DEMO56F8014-EE, DEMO56F8013-EE
Interface Type
SCI, SPI, I2C
Minimum Operating Temperature
- 40 C
For Use With
CPA56F8013 - BOARD SOCKET FOR MC56F8013APMOTOR56F8000E - KIT DEMO MOTOR CTRL SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC56F8011VFAE
Manufacturer:
Freescale
Quantity:
1
Company:
Part Number:
MC56F8011VFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
frequency.
B, the internal [state-dependent component], reflects the supply current required by certain on-chip
resources only when those resources are in use. These include RAM, Flash memory and the ADCs.
C, the internal [dynamic component], is classic C*V
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V
of the I/O cell types used on the 56800E reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change.
in the I/O cells as a function of capacitive load. In these cases:
where:
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found
to be fairly low when averaged over a period of time.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the
device. Sum the total of all V
for the purposes of these rough calculations. For instance, if there is a total of eight PWM outputs driving
10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored,
as it is assumed to be negligible.
Freescale Semiconductor
•
•
•
Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
TotalPower = Σ((Intercept + Slope*Cload)*frequency/10MHz)
Table 10-20 I/O Loading Coefficients at 10MHz
8mA drive
4mA drive
2
/R or IV to arrive at the resistive load contribution to power. Assume V = 0.5
56F8013/56F8011 Data Sheet, Rev. 12
Table 10-20
provides coefficients for calculating power dissipated
2
Intercept
1.15mW
*F CMOS power dissipation corresponding to the
1.3
0.11mW / pF
0.11mW / pF
Slope
2
*F, although simulations on two
Power Consumption
117