HD64F3642AH Renesas Electronics America, HD64F3642AH Datasheet - Page 176
HD64F3642AH
Manufacturer Part Number
HD64F3642AH
Description
IC H8 MCU FLASH 16K 64QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet
1.HD64F3644HV.pdf
(551 pages)
Specifications of HD64F3642AH
Core Processor
H8/300L
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
53
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 6 ROM
High-Speed, High-Reliability Erasing: The flash memory in the H8/3644F, H8/3643F, and
H8/3642AF uses a high-speed, high-reliability erasing procedure. This procedure provides higher
erasing speed without subjecting the device to voltage stress and without sacrificing the reliability
of data reliability.
Figure 6.19 shows the basic high-speed, high-reliability erasing flowchart. Tables 6.15 and 6.16
list the electrical characteristics during erasing.
Rev. 6.00 Sep 12, 2006 page 154 of 526
REJ09B0326-0600
Note: * Follow the high-speed, high-reliability programming flowchart in programming all bits.
Address + 1
If 0 has already been written, perform programming for unprogrammed bits.
address
Figure 6.19 High-Speed, High-Reliability Erasing
No
Erase setup/erase command
Erase-verify command
Program all bits to 0 *
Last address?
Wait (10 ms)
Address = 0
Wait (6 s)
n + 1
Verify?
n = 0
Start
End
OK
Yes
n
NG
n = 3000?
Error
Yes
No
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