R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 235
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R4F24268NVRFQV
Manufacturer:
Renesas Electronics America
Quantity:
135
Company:
Part Number:
R4F24268NVRFQV
Manufacturer:
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Quantity:
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H8S/2426, H8S/2426R, H8S/2424 Group
6.5.5
The read strobe (RD) timing can be changed for individual areas by setting bits RDN7 to RDN0 to
1 in RDNCR. Figure 6.19 shows an example of the timing when the read strobe timing is changed
in basic bus 3-state access space.
When the DMAC or EXDMAC is used in single address mode, note that if the RD timing is
changed by setting RDNn to 1, the RD timing will change relative to the rise of DACK or
EDACK.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Read
Write
Notes: 1. Downward arrows indicate the timing of WAIT pin sampling.
Read Strobe (RD) Timing
2. When RDNn = 0
φ
WAIT
Address bus
AS
RD
Data bus
HWR, LWR
Data bus
Figure 6.18 Example of Wait State Insertion Timing
T
1
By program wait
T
2
T
w
Write data
By WAIT pin
T
w
Section 6 Bus Controller (BSC)
T
w
Read data
Page 205 of 1372
T
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